A student project for AHSE1500: Foundations of Business and Entrepreneurship (taught in Spring 2006) featuring an Olin College themed tradable card game. It consists of cards of students, professors, locations, and events.
This record contains the Final Report for the project and scanned images of all the cards in the game.
We present a generalized study of light emission from reverse biased p–n junctions under avalanche breakdown conditions. A model is developed based on direct and indirect interband processes including self-absorption to describe measured electroluminescence spectra. This model was used to analyze experimental data for silicon (Si) and gallium arsenide p–njunctions and can be extended to several types of semiconductors regardless of their band gaps. This model can be used as a noninvasive technique for the determination of the junction depth. It has also been used to explain the observed changes of the Si p–n junction electroluminescence spectra after fast neutron irradiation. In particular, it is demonstrated that the neutron irradiation affects both the semiconductor and the overlying passivation oxide layer.
The Rockwell Automation SCOPE team worked to provide an out-of-box quality control sensor for automation applications. Quality control sensors need to provide fast inspection capabilities for factories to ensure continuous quality of products. The team also looked into business opportunities for the sensor in line with Rockwell Automation’s industrial customer base. The team optimized the current sensor and made improvements. They also explored market segments where the sensor could make a significant impact on a factory’s quality control and automation processes.